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APTGV50H60BG APTGV50H60BG ? rev 0 september, 2007 www.microsemi.com 1-15 these devices are sensitive to electrostatic discharge. proper handing procedures should be followed. see application note apt0502 on www.microsemi.com q3 out1a vbus1 cr2 q4 e4 k d5 q1 0/vbus e2 q2 g2 s5 sk5 g5 q 5 cr5 g1 cr1 k cr4 cr3 vbus2 out2a d5 out2b out1b s5 g3 g4 full bridge top switches : trench + field stop igbt full bridge bottom switches : fast npt igbt q5 boost chopper : coolmos? d5 d5 g2 s5 s5 g5 sk5 vbus 1 vbus 2 out 2a out 2b g3 e4 g4 0/vbus e2 out 1a out 1b g1 k k all multiple inputs and outputs must be shorted together out1a/out1b ; vbus1/vbus2 ; k/k ; ? trench & field stop igbt q1, q3: v ces = 600v , i c = 50a @ tc = 80c fast npt igbt q2, q4: v ces = 600v ; i c = 50a @ tc = 80c coolmos? q5: v ces = 600v ; i c = 49a @ tc = 25c application ? solar converter features ? q2, q4 (fast non punch through (npt) igbt) - switching frequency up to 100 khz - rbsoa & scsoa rated - low tail current ? q1, q3 (trench & field stop igbt) - low voltage drop - switching frequency up to 20 khz - rbsoa & scsoa rated - low tail current q5 (coolmos?) - ultra low r dson - low miller capacitance - ultra low gate charge - avalanche energy rated ? kelvin emitter for easy drive ? very low stray inductance ? high level of integration benefits ? optimized conduction & switching losses ? direct mounting to heatsink (isolated package) ? low junction to case thermal resistance ? solderable terminals both for power and signal for easy pcb mounting ? low profile ? easy paralleling due to positive t c of v cesat ? rohs compliant boost chopper coolmos? + full bridge npt & trench + field stop igbt power module
APTGV50H60BG APTGV50H60BG ? rev 0 september, 2007 www.microsemi.com 2-15 all ratings @ t j = 25c unless otherwise specified 1. full bridge top switches 1.1 top trench + field stop igbt ? characteristics absolute maximum ratings symbol parameter max ratings unit v ces collector - emitter breakdown voltage 600 v t c = 25c 80 i c continuous collector current t c = 80c 50 i cm pulsed collector current t c = 25c 100 a v ge gate ? emitter voltage 20 v p d maximum power dissipation t c = 25c 176 w rbsoa reverse bias safe operating area t j = 150c 100a @ 550v electrical characteristics symbol characteristic test conditions min typ max unit i ces zero gate voltage collector current v ge = 0v, v ce = 600v 250 a t j = 25c 1.5 1.9 v ce(sat) collector emitter saturation voltage v ge =15v i c = 50a t j = 150c 1.7 v v ge(th) gate threshold voltage v ge = v ce , i c = 600a 5.0 5.8 6.5 v i ges gate ? emitter leakage current v ge = 20v, v ce = 0v 600 na dynamic characteristics symbol characteristic test conditions min typ max unit c ies input capacitance 3150 c oes output capacitance 200 c res reverse transfer capacitance v ge = 0v v ce = 25v f = 1mhz 95 pf t d(on) turn-on delay time 110 t r rise time 45 t d(off) turn-off delay time 200 t f fall time inductive switching (25c) v ge = 15v v bus = 300v i c = 50a r g = 8.2 ? 40 ns t d(on) turn-on delay time 120 t r rise time 50 t d(off) turn-off delay time 250 t f fall time inductive switching (150c) v ge = 15v v bus = 300v i c = 50a r g = 8.2 ? 60 ns t j = 25c 0.3 e on turn-on switching energy t j = 150c 0.43 mj t j = 25c 1.35 e off turn-off switching energy v ge = 15v v bus = 300v i c = 50a r g = 8.2 ? t j = 150c 1.75 mj r thjc junction to case thermal resistance 0.85 c/w
APTGV50H60BG APTGV50H60BG ? rev 0 september, 2007 www.microsemi.com 3-15 1.2 top fast diode characteristics symbol characteristic test conditions min typ max unit v rrm maximum peak repetitive reverse voltage 600 v t j = 25c 25 i rm maximum reverse leakage current v r =600v t j = 125c 500 a i f dc forward current tc = 80c 30 a i f = 30a 1.8 2.3 i f = 60a 2.1 v f diode forward voltage i f = 30a t j = 125c 1.5 v t j = 25c 25 t rr reverse recovery time t j = 125c 160 ns t j = 25c 35 q rr reverse recovery charge i f = 30a v r = 400v di/dt =200a/s t j = 125c 480 nc r thjc junction to case thermal resistance 1.2 c/w 2. full bridge bottom switches 2.1 bottom fast npt igbt characteristics absolute maximum ratings symbol parameter max ratings unit v ces collector - emitter breakdown voltage 600 v t c = 25c 65 i c continuous collector current t c = 80c 50 i cm pulsed collector current t c = 25c 230 a v ge gate ? emitter voltage 20 v p d maximum power dissipation t c = 25c 250 w rbsoa reverse bias safe operating area t j = 125c 100a @ 500v electrical characteristics symbol characteristic test conditions min typ max unit t j = 25c 250 i ces zero gate voltage collector current v ge = 0v v ce = 600v t j = 125c 500 a t j = 25c 1.7 2.0 2.45 v ce(sat) collector emitter saturation voltage v ge =15v i c = 50a t j = 125c 2.2 v v ge(th) gate threshold voltage v ge = v ce , i c = 1ma 4 6 v i ges gate ? emitter leakage current v ge = 20v, v ce = 0v 400 na
APTGV50H60BG APTGV50H60BG ? rev 0 september, 2007 www.microsemi.com 4-15 dynamic characteristics symbol characteristic test conditions min typ max unit c ies input capacitance 2200 c oes output capacitance 323 c res reverse transfer capacitance v ge = 0v v ce = 25v f = 1mhz 200 pf q g total gate charge 166 q ge gate ? emitter charge 20 q gc gate ? collector charge v ge = 15v v bus = 300v i c = 50a 100 nc t d(on) turn-on delay time 40 t r rise time 9 t d(off) turn-off delay time 120 t f fall time inductive switching (25c) v ge = 15v v bus = 400v i c = 50a r g = 2.7 ? 12 ns t d(on) turn-on delay time 42 t r rise time 10 t d(off) turn-off delay time 130 t f fall time inductive switching (125c) v ge = 15v v bus = 400v i c = 50a r g = 2.7 ? 21 ns e on turn-on switching energy t j = 125c 0.5 e off turn-off switching energy v ge = 15v v bus = 400v i c = 50a r g = 2.7 ? t j = 125c 1 mj r thjc junction to case thermal resistance 0.5 c/w 2.2 bottom diode characteristics symbol characteristic test conditions min typ max unit v rrm maximum peak repetitive reverse voltage 600 v t j = 25c 25 i rm maximum reverse leakage current v r =600v t j = 125c 500 a i f dc forward current tc = 80c 30 a i f = 30a 1.8 2.3 i f = 60a 2.1 v f diode forward voltage i f = 30a t j = 125c 1.5 v t j = 25c 25 t rr reverse recovery time t j = 125c 160 ns t j = 25c 35 q rr reverse recovery charge i f = 30a v r = 400v di/dt =200a/s t j = 125c 480 nc r thjc junction to case thermal resistance 1.2 c/w
APTGV50H60BG APTGV50H60BG ? rev 0 september, 2007 www.microsemi.com 5-15 3. boost chopper switch 3.1 coolmos? characteristics absolute maximum ratings electrical characteristics symbol characteristic test conditions min typ max unit v gs = 0v,v ds = 600v t j = 25c 250 i dss zero gate voltage drain current v gs = 0v,v ds = 600v t j = 125c 500 a r ds(on) drain ? source on resistance v gs = 10v, i d = 24.5a 40 45 m ? v gs(th) gate threshold voltage v gs = v ds , i d = 3ma 2.1 3 3.9 v i gss gate ? source leakage current v gs = 20 v, v ds = 0v 100 na dynamic characteristics symbol characteristic test conditions min typ max unit c iss input capacitance 7.2 c oss output capacitance v gs = 0v ; v ds = 25v f = 1mhz 0.29 nf q g total gate charge 150 q gs gate ? source charge 34 q gd gate ? drain charge v gs = 10v v bus = 300v i d = 49a 51 nc t d(on) turn-on delay time 21 t r rise time 30 t d(off) turn-off delay time 100 t f fall time inductive switching (125c) v gs = 10v v bus = 400v i d = 49a r g = 4.7 ? 45 ns e on turn-on switching energy 675 e off turn-off switching energy inductive switching @ 25c v gs = 10v ; v bus = 400v i d = 49a ; r g = 4.7 ? 520 j e on turn-on switching energy 1100 e off turn-off switching energy inductive switching @ 125c v gs = 10v ; v bus = 400v i d = 49a ; r g = 4.7 ? 635 j r thjc junction to case thermal resistance 0.5 c/w symbol parameter max ratings unit v dss drain - source breakdown voltage 600 v t c = 25c 49 i d continuous drain current t c = 80c 38 i dm pulsed drain current 130 a v gs gate - source voltage 20 v r dson drain - source on resistance 45 m ? p d maximum power dissipation t c = 25c 290 w i ar avalanche current (repetitive and non repetitive) 15 a e ar repetitive avalanche energy 3 e as single pulse avalanche energy 1900 mj
APTGV50H60BG APTGV50H60BG ? rev 0 september, 2007 www.microsemi.com 6-15 3.2 chopper diode characteristics symbol characteristic test conditions min typ max unit v rrm maximum peak repetitive reverse voltage 600 v t j = 25c 25 i rm maximum reverse leakage current v r =600v t j = 125c 500 a i f dc forward current tc = 80c 60 a i f = 60a 1.7 2.3 i f = 120a 2 v f diode forward voltage i f = 60a t j = 125c 1.4 v t j = 25c 70 t rr reverse recovery time t j = 125c 140 ns t j = 25c 100 q rr reverse recovery charge i f = 60a v r = 400v di/dt =200a/s t j = 125c 690 nc r thjc junction to case thermal resistance 0.85 c/w 4. package characteristics symbol characteristic min typ max unit v isol rms isolation voltage, any terminal to case t =1 min, i isol<1ma, 50/60hz 2500 v t j operating junction temperature range -40 150* t stg storage temperature range -40 125 t c operating case temperature -40 100 c torque mounting torque to heatsink m5 2.5 4.7 n.m wt package weight 160 g * tj=175c for trench & field stop igbt 5. sp4 package outline (dimensions in mm) see application note apt0501 - mounting instructions for sp4 power modules on www.microsemi.com
APTGV50H60BG APTGV50H60BG ? rev 0 september, 2007 www.microsemi.com 7-15 6. full bridge top switches curves 6.1 top trench + field stop igbt typical performance curves output characteristics (v ge =15v) t j =25c t j =25c t j =125c t j =150c 0 20 40 60 80 100 00.511.522.53 v ce (v) i c (a) output characteristics v ge =15v v ge =13v v ge =19v v ge =9v 0 20 40 60 80 100 00.511.522.533.5 v ce (v) i c (a) t j = 150c transfert characteristics t j =25c t j =25c t j =125c t j =150c 0 20 40 60 80 100 56789101112 v ge (v) i c (a) energy losses vs collector current eon eoff 0 0.5 1 1.5 2 2.5 3 3.5 0 20406080100 i c (a) e (mj) v ce = 300v v ge = 15v r g = 8.2 ? t j = 150c eon eoff 0 0.5 1 1.5 2 2.5 3 5 152535455565 gate resistance (ohms) e (mj) v ce = 300v v ge =15v i c = 50a t j = 150c switching energy losses vs gate resistance reverse bias safe operating area 0 25 50 75 100 125 0 100 200 300 400 500 600 700 v ce (v) i c (a) v ge =15v t j =150c r g =8.2 ? maximum effective transient thermal impedance, junction to case vs pulse duration 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.2 0.4 0.6 0.8 1 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration in seconds thermal impedance (c/w)
APTGV50H60BG APTGV50H60BG ? rev 0 september, 2007 www.microsemi.com 8-15 6.2 top fast diode typical performance curves t j =25c t j =125c 0 20 40 60 80 100 120 0.0 0.5 1.0 1.5 2.0 2.5 3.0 v f , anode to cathode voltage (v) i f , forward current (a) forw ard current vs forw ard voltage 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.2 0.4 0.6 0.8 1 1.2 1.4 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) maximum effective transient thermal impedance, junction to case vs pulse duration
APTGV50H60BG APTGV50H60BG ? rev 0 september, 2007 www.microsemi.com 9-15 7. full bridge bottom switches curves 7.1 bottom fast npt igbt typical performance curves output characteristics (v ge =15v) t j =25c t j =125c 0 50 100 150 01234 ic, collector current (a) v ce , collector to emitter voltage (v) 250s pulse test < 0.5% duty cycle transfer characteristics t j =25c t j =125c 0 25 50 75 100 125 150 012345678910 v ge , gate to emitter voltage (v) ic, collector current (a) 250s pulse test < 0.5% duty cycle ic=100a ic=50a ic=25a 0 1 2 3 4 5 6 7 8 6 8 10 12 14 16 v ge , gate to emitter voltage (v) v ce , collector to emitter voltage (v) on state voltage vs gate to emitter volt. t j = 25c 250s pulse test < 0.5% duty cycle ic=100a ic=50a ic=25a 0 0.5 1 1.5 2 2.5 3 3.5 4 25 50 75 100 125 t j , junction temperature (c) v ce , collector to emitter voltage (v) on state voltage vs junction temperature 250s pulse test < 0.5% duty cycle v ge = 15v 0.80 0.90 1.00 1.10 1.20 25 50 75 100 125 t j , junction temperature (c) collector to emitter breakdown voltage (normalized) breakdown voltage vs junction temp. 0 10 20 30 40 50 60 70 25 50 75 100 125 150 t c , case temperature (c) ic, dc collector current (a) dc collector current vs case temperature gate charge v ce =120v v ce =300v v ce =480v 0 2 4 6 8 10 12 14 16 18 0 25 50 75 100 125 150 175 200 gate charge (nc) v ge , gate to emitter voltage (v) i c = 50a t j = 25c output characteristics (v ge =10v) t j =25c t j =125c 0 50 100 150 01234 ic, collector current (a) v ce , collector to emitter voltage (v) 250s pulse test < 0.5% duty cycle
APTGV50H60BG APTGV50H60BG ? rev 0 september, 2007 www.microsemi.com 10 - 15 v ge = 15v 20 30 40 50 60 0 25 50 75 100 125 150 i ce , collector to emitter current (a) td(on), turn-on delay time (ns) turn-on delay time vs collector current tj = 125c v ce = 400v r g = 2.7 ? v ge =15v, t j =25c v ge =15v, t j =125c 50 75 100 125 150 175 0 25 50 75 100 125 150 i ce , collector to emitter current (a) td(off), turn-off delay time (ns) turn-off delay time vs collector current v ce = 400v r g = 2.7 ? v ge =15v, t j =125c 0 10 20 30 40 50 60 0 25 50 75 100 125 150 i ce , collector to emitter current (a) tr, rise time (ns) current rise time vs collector current v ce = 400v r g = 2.7 ? t j = 25c t j = 125c 0 10 20 30 40 50 60 0 25 50 75 100 125 150 i ce , collector to emitter current (a) tf, fall time (ns) current fall time vs collector current v ce = 400v, v ge = 15v, r g = 2.7 ? t j =125c, v ge =15v 0 0.5 1 1.5 2 0 25 50 75 100 125 150 i ce , collector to emitter current (a) e on , turn-on energy loss (mj) turn-on energy loss vs collector current v ce = 400v r g = 2.7 ? t j = 125c 0 0.5 1 1.5 2 2.5 0 25 50 75 100 125 150 i ce , collector to emitter current (a) e off , turn-off energy loss (mj) turn-off energy loss vs collector current v ce = 400v v ge = 15v r g = 2.7 ? eon, 50a eon, 50a eoff, 50a 0 0.5 1 1.5 2 2.5 3 0 5 10 15 20 25 gate resistance (ohms) switching energy losses vs gate resistance switching energy losses (mj) v ce = 400v v ge = 15v t j = 125c 0 20 40 60 80 100 120 0 200 400 600 i c , collector current (a) reverse bias safe operating area v ce , collector to emitter voltage (v)
APTGV50H60BG APTGV50H60BG ? rev 0 september, 2007 www.microsemi.com 11 - 15 cies cres coes 100 1000 10000 0 1020304050 c, capacitance (pf) capacitance vs collector to emitter voltage v ce , collector to emitter voltage (v) 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.1 0.2 0.3 0.4 0.5 0.6 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) maximum effective transient thermal impedance, junction to case vs pulse duration operating frequency vs collector current hard switching zcs zvs 0 40 80 120 160 200 240 0 20 40 60 80 100 i c , collector current (a) f max , operating frequency (khz) v ce = 400v d = 50% r g = 2.7 ? t j = 125c t c = 75c 7.2 bottom diode typical performance curves t j =25c t j =125c 0 20 40 60 80 100 120 0.0 0.5 1.0 1.5 2.0 2.5 3.0 v f , anode to cathode voltage (v) i f , forward current (a) forw ard current vs forw ard voltage 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.2 0.4 0.6 0.8 1 1.2 1.4 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) maximum effective transient thermal impedance, junction to case vs pulse duration
APTGV50H60BG APTGV50H60BG ? rev 0 september, 2007 www.microsemi.com 12 - 15 8. boost chopper switch curves 8.1 coolmos? typical performance curves 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.1 0.2 0.3 0.4 0.5 0.6 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) maximum effective transient thermal impedance, junction to case vs pulse duration 4v 4.5v 5v 5.5v 6v 6.5v 0 40 80 120 160 200 240 280 320 360 0 5 10 15 20 25 v ds , drain to source voltage (v) i d , drain current (a) v gs =15&10v low voltage output characteristics transfert characteristics t j =25c t j =125c 0 20 40 60 80 100 120 140 01234567 v gs , gate to source voltage (v) i d , drain current (a) v ds > i d (on)xr ds (on)max 250s pulse test @ < 0.5 duty cycle r ds (on) vs drain current v gs =10v v gs =20v 0.9 0.95 1 1.05 1.1 1.15 1.2 1.25 1.3 0 20 40 60 80 100 120 140 i d , drain current (a) r ds (on) drain to source on resistance normalized to v gs =10v @ 50a 0 10 20 30 40 50 25 50 75 100 125 150 t c , case temperature (c) i d , dc drain current (a) dc drain current vs case temperature
APTGV50H60BG APTGV50H60BG ? rev 0 september, 2007 www.microsemi.com 13 - 15 0.8 0.9 1.0 1.1 1.2 25 50 75 100 125 150 t j , junction temperature (c) breakdown voltage vs temperature bv dss , drain to source breakdown voltage (normalized) on resistance vs temperature 0.0 0.5 1.0 1.5 2.0 2.5 3.0 25 50 75 100 125 150 t j , junction temperature (c) r ds (on), drain to source on resistance (normalized) v gs =10v i d = 50a threshold voltage vs temperature 0.6 0.7 0.8 0.9 1.0 1.1 25 50 75 100 125 150 t c , case temperature (c) v gs (th), threshold voltage (normalized) maximum safe operating area 10 ms 1 ms 100 s 1 10 100 1000 1 10 100 1000 v ds , drain to source voltage (v) i d , drain current (a) limited b y r ds on single pulse t j =150c t c =25c ciss crss coss 10 100 1000 10000 100000 0 1020304050 v ds , drain to source voltage (v) c, capacitance (pf) capacitance vs drain to source voltage v ds =120v v ds =300v v ds =480v 0 2 4 6 8 10 12 0 20 40 60 80 100 120 140 160 gate charge (nc) v gs , gate to source voltage (v) gate charge vs gate to source voltage i d =50a t j =25c
APTGV50H60BG APTGV50H60BG ? rev 0 september, 2007 www.microsemi.com 14 - 15 t j =25c t j =150c 1 10 100 1000 0.3 0.5 0.7 0.9 1.1 1.3 1.5 v sd , source to drain voltage (v) i dr , reverse drain current (a) source to drain diode forward voltage delay times vs current td(on) td(off) 0 20 40 60 80 100 120 140 0 1020304050607080 i d , drain current (a) t d(on) and t d(off) (ns) v ds =400v r g =5 ? t j =125c l=100h rise and fall times vs current t r t f 0 10 20 30 40 50 60 70 0 1020304050607080 i d , drain current (a) t r and t f (ns) v ds =400v r g =5 ? t j =125c l=100h switching energy vs current e on e off 0 0.4 0.8 1.2 1.6 2 0 1020304050607080 i d , drain current (a) switching energy (mj) v ds =400v r g =5 ? t j =125c l=100h e on e off 0 0.5 1 1.5 2 2.5 0 1020304050 gate resistance (ohms) switching energy (mj) switching energy vs gate resistance v ds =400v i d =50a t j =125c l=100h hard switching zcs zvs 0 50 100 150 200 250 300 5 101520253035404550 i d , drain current (a) frequency (khz) operating frequency vs drain current v ds =400v d=50% r g =5 ? t j =125c t c =75c
APTGV50H60BG APTGV50H60BG ? rev 0 september, 2007 www.microsemi.com 15 - 15 8.2 chopper diode typical performance curves t j =25c t j =125c 0 40 80 120 160 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 v f , anode to cathode voltage (v) i f , forward current (a) forw ard current vs forw ard voltage 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) maximum effective transient thermal impedance, junction to case vs pulse duration microsemi reserves the right to change, without notice, the specifications and info rmation contained herein microsemi's products are covered by one or more of u.s patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. u.s and foreign pa tents pending. all rights reserved.

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